High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 693-696

  Pusl, J A ^a   Brown, J J ^a   Shealy, J B ^a   Hu, M ^a   Schmitz, A E ^a   Docter, D P ^a   Case, M G ^a   Thompson, M A ^a   Nguyen, L D ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT TESTING; MICROWAVE INTEGRATED CIRCUITS; PERFORMANCE; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE;

AMPLIFIER MODULE DESIGN; BREAKDOWN VOLTAGE; RADIO FREQUENCY LIFETEST;

POWER AMPLIFIERS;

EID: 0029697452     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)