Electrical characterization of irradiation plus annealing induced VAsZnGa Pairs in p-type GaAs (Zn) crystals

Crystal Research and Technology

Volumn 31, Issue 3, 1996, Pages 335-342

  Glinchuk, K D ^a   Prokhorovich, A V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CRYSTAL GROWTH FROM MELT; DIFFUSION; ELECTRIC PROPERTIES; IRRADIATION; SEMICONDUCTING GALLIUM ARSENIDE; VANADIUM COMPOUNDS;

DISSOCIATION ENERGY; DISSOCIATION KINETICS; ELECTRON IRRADIATION; MIGRATION ENERGY;

CRYSTALS;

EID: 0029696522     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170310312     Document Type: Article

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