High-power, high-efficiency cell design for 26 GHz HBT power amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 843-846

  Tanaka, S ^a   Murakami, S ^a   Amamiya, Y ^a   Shimawaki, H ^a   Furuhata, N ^a   Goto, N ^a   Honjo, K ^a   Ishida, Y ^a   Saito, Y ^a   Yamamoto, K ^a   Yajima, M ^a   Temino, R ^a   Hisada, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

LINEAR GAIN; POWER ADDED EFFICIENCY; POWER DENSITY; SING CELL CHIP;

POWER AMPLIFIERS;

EID: 0029694278     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)