Strain evolution and dopant activation in P-lmplanted metastable pseudomorphic Si(100)/Ge0.12Si0.88

Journal of Electronic Materials

Volumn 25, Issue 1, 1996, Pages 87-92

  Lie, D Y C ^a,c   Song, J H ^a,d   Eisen, F ^a   Nicolet, M A ^a   Theodore, N B ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b MOTOROLA INC   (United States)

^c Rockwell International   (United States)

^d Yonsei University   (South Korea)

Author keywords

Dopant activation; Implantation; Silicon germanium; Solid phase epitaxy; Strain relaxation

Indexed keywords

DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); FILMS; GERMANIUM; ION IMPLANTATION; PHOSPHORUS; SEMICONDUCTING INTERMETALLICS; SILICON; STRAIN; STRESS RELAXATION;

DOPANT ACTIVATION; SILICON GERMANIDE; SOLID PHASE EPITAXY; STRAIN EVOLUTION;

HETEROJUNCTIONS;

EID: 0029679096     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666179     Document Type: Article

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