Simulation of oxygen precipitation in CZ-Si crystal during the pulling process

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 22-25

  Nakamura, K ^a   Saishuoji, T ^a   Kubota, T ^a   Tanimura, T ^a  

^a Komatsu Electronic Metals Co Ltd   (Japan)

Author keywords

Defect formation; Diffusion; Silicon; Silicon oxide

Indexed keywords

CRYSTAL GROWTH; OXYGEN; PRECIPITATION; SILICON;

EID: 0029671663     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01297-4     Document Type: Article

References (5)

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3. M. Hourai, T. Nagashima, E. Kajita et al., Semiconductor Silicon, 1994, p. 156.
4. S. Sadamitsu, S. Umeno, Y. Koike et al., Jpn. J. Appl. Phys., 32 (1993) 3675.
5. N.I. Puzanov and A.M. Eidenzon, Semicond. Sci. Technol., 7 (1992) 406.