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Microwave and Optical Technology Letters

Volumn 9, Issue 2, 1995, Pages 63-66

An on‐wafer method for C‐V characterization of heterostructure diodes

(2) Stake, Jan a Grönqvist, Hans b

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b SAAB AB (Sweden)

Author keywords

heterostructure devices; high frequency diodes; multipliers; oscillators; Parameter extraction

Indexed keywords

CENTRAL MESA DIODE; COPLANAR PROBES; HETEROSTRUCTURE BARRIER VORACTOR; HETEROSTRUCTURE DEVICES; HIGH FREQUENCY DIODES; ON WAFER METHOD; PARAMETER EXTRACTION; RESONANT TUNNELING DIODE; RING DIODE;

CURVE FITTING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FREQUENCIES; FUNCTIONS; HETEROJUNCTIONS; MILLIMETER WAVES; OPTIMIZATION; OSCILLATORS (ELECTRONIC); PROBES; SEMICONDUCTOR DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 0029636650 PISSN: 08952477 EISSN: 10982760 Source Type: Journal
DOI: 10.1002/mop.4650090202 Document Type: Article

Times cited : (5)

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