Reliability of aluminum-free 808 nm high-power laser diodes with uncoated mirrors

Applied Physics Letters

Volumn 66, Issue , 1995, Pages 3087-

  Eliashevich, I ^a   Diaz, J ^a   Yi, H ^a   Wang, L ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; CATASTROPHIC OPTICAL DAMAGE; INDIUM GALLIUM ARSENIC PHOSPHIDE; SEPARATE CONFINEMENT HETEROSTRUCTURE; WAVELENGTH;

DEGRADATION; HIGH POWER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR LASERS;

EID: 0029636597     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.113404     Document Type: Article

References (8)