Calculating double-exponential diode model parameters from previously extracted single-exponential model parameters

Electronics Letters

Volumn 31, Issue 1, 1995, Pages 71-72

  Sanchez, F J Garcia ^a   Ortiz Conde, A ^a   Liou, J J ^b  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

Diodes; Semiconductor device models

Indexed keywords

ALGORITHMS; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FUNCTIONS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

DOUBLE EXPONENTIAL DIODE; DRAIN BODY JUNCTION; MODEL PARAMETERS; PARASITIC SERIES RESISTANCE; PRE EXPONENTIAL REVERSE CURRENTS;

SEMICONDUCTOR DIODES;

EID: 0029636108     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950030     Document Type: Article

References (6)

1. SCHRODER, D.K.: ‘Semiconductor material and device characterization’ (John Wiley & Sons, New York, 1990), Chap. 4
2. NORDE, H.: ‘A modified forward I-V plot for Schottky diodes with high series resistance’, J. Appl. Phys., 1979, 50, pp. 5052-5053
3. SATO, K., and YASUMRA, Y.: ‘Study of forward I-V plot for Schottky diodes with high series resistance’, J. Appl. Phys., 1985, 58, pp. 3655-3657
4. BOHLIN, k.E.: ‘Generalized Norde plot including determination of the ideality factor’, J. Appl. Phys., 1986, 60, pp. 1223-1224
5. LEE, T.C., HUNG, S., BELING, C.D., and AU, H.L.: ‘A systematic approach to the measurement of ideality factor, series resistance, and barrier height of Schottky diodes’, J. Appl. Phys., 1992, 72. pp. 4739-4742
6. ORTIZ-CONDE, A., GARCIA SANCHEZ, F.J., LIOU, J.J., ANDRIAN, J., LAURENCE, R.J., and SCHNIDT, P.E.: ‘A method to extract parameters in a generalized two-terminal device’ Proc. Int. Semicond. Device Research Symp., Dec. 1993, Charlottesville, Virginia, USA, pp. 262-265