1.3 μm waveguided electro absorption modulators with strain-compensated InAsP/InGaP MQW structures

Electronics Letters

Volumn 31, Issue 16, 1995, Pages 1339-1341

  Wakita, K ^a   Kotaka, I ^a   Amano, T ^a   Sugiura, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Electroabsorption modulators; Semiconductor quantum wells

Indexed keywords

BANDWIDTH; ELECTROMAGNETIC WAVE ABSORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; WAVEGUIDES;

GAS SOURCE MOLECULAR BEAM EPITAXY; LOW DRIVING VOLTAGE; MULTIQUANTUM WELL STRUCTURES; TENSILE STRAIN; WAVEGUIDED ELECTROABSORPTION MODULATORS;

LIGHT MODULATORS;

EID: 0029634690     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950949     Document Type: Article

References (9)

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6. HOU, H.Q., CHENG, A. N., WTEDER. H.H., CHANG. W.S.C., and TU, C.W.: ‘Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3μm waveguide modulators’. Appl. Phys. Lett. 1993. 63, pp. 1833-1835
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9. SAHARA, R., MORITO, K., KOTAKI, Y., SODA, H., and OKAZAKI, N.: ‘InGaAsP MQW electroabsorption modulators with tensile-strained barriers’. Tech. Dig., OFC'95, p. 219