Thermal stability of Si/Si1 - x - yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition

Journal of Crystal Growth

Volumn 157, Issue 1-4, 1995, Pages 414-419

  Warren, Patricia ^a   Mi, Jian ^a   Overney, Frédéric ^a   Dutoit, Michel ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; LATTICE CONSTANTS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; STRAIN; THERMODYNAMIC STABILITY;

PSEUDOMORPHIC SILICON ALLOY LAYERS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTIONS;

EID: 0029633738     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00334-7     Document Type: Article

References (12)

1. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si