Reactional mechanisms of the chemical vapour deposition of SiC-based ceramics from CH3SiCl3 H2 gas precursor

Journal of Crystal Growth

Volumn 155, Issue 3-4, 1995, Pages 205-213

  Loumagne, F ^a   Langlais, F ^a   Naslain, R ^a  

^a Laboratoire des Composites Thermostructuraux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL REACTIONS; CHEMICAL VARIABLES CONTROL; HYDROCHLORIC ACID; HYDROGEN; METHANE; MIXTURES; REACTION KINETICS; SILICON CARBIDE;

GAS PRECURSOR; KINETIC LAW; LANGMUIR-HINSHELWOOD MODEL; REACTIONAL MECHANISM;

CHEMICAL VAPOR DEPOSITION;

EID: 0029633269     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00181-6     Document Type: Article

References (29)

1. Thermodynamic Analysis and Kinetic Implications of Chemical Vapor Deposition of Sic from Si-C-C1-H Gas Systems
2. Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °C
3. Depletion Effects of Silicon Carbide Deposition from Methyltrichlorosilane
4. D. Lespiaux and F. Langlais, Thin Solid Films, in press.
5. Surface reaction mechanism of SiCl2 with carrier gas H2 in silicon vapor phase epitaxial growth