Preparation and characterization of ZnxSr1 - xS compound thin films

Journal of Crystal Growth

Volumn 154, Issue 3-4, 1995, Pages 339-350

  Lee, Sang Tae ^a   Kitagawa, Masahiko ^a   Suzukawa, Ryuji ^a   Ichino, Kunio ^a   Kobayashi, Hiroshi ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION; CRYSTAL STRUCTURE; FILM GROWTH; OPTICAL PROPERTIES; PHASE SEPARATION; PHASE TRANSITIONS; SEMICONDUCTING ZINC COMPOUNDS; SOLID SOLUTIONS; SOLUBILITY; SPUTTERING; ZINC SULFIDE;

MISCIBILITY GAP; RADIO FREQUENCY SPUTTERING; SINGLE-PHASE ROCKSALT STRUCTURE; SINGLE-PHASE ZINCBLENDE STRUCTURE; STRONTIUM SULFIDE; THERMALLY NONEQUILIBRIUM DEPOSITION METHOD; ZINC STRONTIUM SULFUR COMPOUND THIN FILM;

THIN FILMS;

EID: 0029633144     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00206-5     Document Type: Article

References (24)

1. Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature
2. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
3. Incorporation of rare gases in sputtered amorphous metal films
4. New developments in IIa–VIb (alkaline-earth chalcogenide) binary semiconductors
5. Sputtering Yields for Normally Incident Hg+-Ion Bombardment at Low Ion Energy