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Volumn 31, Issue 3, 1995, Pages 237-238
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Low polarisation dependence (< 0.3 dB) in an EA modulator using a polyimide-buried high-mesa ridge structure with an InGaAsP bulk absorption layer
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Author keywords
Electroabsorption modulators
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Indexed keywords
ELECTROMAGNETIC FIELDS;
ELECTROMAGNETIC WAVE ATTENUATION;
LIGHT ABSORPTION;
LIGHT POLARIZATION;
POLYIMIDES;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING POLYMERS;
SEMICONDUCTOR DEVICE STRUCTURES;
ELECTROABSORPTION MODULATORS;
INDIUM GALLIUM ARSENIC PHOSPHIDE BULK ABSORPTION LAYER;
LOW POLARIZATION DEPENDENCE;
LOW POLARIZATION DEPENDENT LOSS;
MULTIQUANTUM WELL STRUCTURES;
POLYIMIDE BURIED HIGH MESA RIDGE STRUCTURE;
LIGHT MODULATORS;
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EID: 0029632432
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:19950115 Document Type: Article |
Times cited : (11)
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References (6)
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