Isolation merged bit line cell(IMBC) for 1Gb DRAM and beyond

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 911-914

  Park, J K ^a   Lee, J Y ^a   Hwang, B H ^a   Jo, S Y ^a   Kim, B C ^a   Jang, S K ^a   Kwon, S D ^a   Kim, D H ^a   Kim, H S ^a   Kim, K N ^a   Park, J W ^a   Lee, J G ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; LITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; TANTALUM COMPOUNDS; TRANSISTORS;

BURIED BIT LINE; CAPACITOR OVER BIT LINE; ISOLATION MERGED BIT LINE CELL; SELF ALIGNED CONTACT; SHALLOW TRENCH ISOLATION;

RANDOM ACCESS STORAGE;

EID: 0029547113     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)