Frequency - Domain Measurement of Carrier Escape Times in MQW Electro-Absorption Optical Modulators

IEEE Photonics Technology Letters

Volumn 7, Issue 12, 1995, Pages 1421-1423

  Ido, T ^a   Sano, H ^a   Tanaka, S ^a   Inoue, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTROOPTICAL EFFECTS; FREQUENCY RESPONSE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

CARRIER ESCAPE TIMES; ELECTROABSORPTION OPTICAL MODULATORS; FREQUENCY DOMAIN MEASUREMENT; OPTICAL SATURATION EFFECT;

LIGHT MODULATORS;

EID: 0029546269     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.477269     Document Type: Article

References (6)

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3. K. Wakita and I. Kotaka, “Multiple-quantum-well optical modulators and their monolithic integration with DFB lasers for optical-fiber communications,” Microwave and Optical Technol. Lett., vol. 7, pp. 120–128, 1994.
4. U. Koren et al., “Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator,” Appl. Phys. Lett., vol. 51, pp. 1132–1134, 1987.
5. T. H. Wood et al., “Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation,” Appl. Phys. Lett., vol. 57, pp. 1081–1083, 1990.
6. T. Ido, H. Sano, D. A. Moss, S. Tanaka and A. Takai, “Strained InGaAs/InA1As MQW electro-absorption modulators with large bandwidth and low driving voltage,” IEEE Photon. Technol. Lett., pp. 1207–1209, 1994.