Reverse short channel effect and channel length dependence of boron penetration in PMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 423-426

  Subramanian, Chitra ^a   Hayden, Jim ^a   Taylor, William ^a   Orlowski, Marius ^a   McNelly, Tom ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; COMPUTER SIMULATION; DIFFUSION; GATES (TRANSISTOR); OXIDES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSISTORS; VOLTAGE MEASUREMENT;

BORON PENETRATION; CHANNEL LENGTH DEPENDENCE; INVERSION CHANNEL CAPACITANCE; REVERSE SHORT CHANNEL EFFECT; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029545617     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)