Effect of hydrogen addition on the preferred orientation of AlN films prepared by reactive sputtering

Thin Solid Films

Volumn 271, Issue 1-2, 1995, Pages 50-55

  Lee, HwandashChul ^a   Lee, Ki Young ^a   Yong, YoondashJoong ^a   Lee, Jai Young ^a   Kim, GuendashHong ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Agency for Defence Development   (South Korea)

Author keywords

Aluminium nitride; Hydrogen; Sputtering; Transmission electron microscopy

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; GRAIN SIZE AND SHAPE; HYDROGEN; MAGNETRON SPUTTERING; NITRIDES; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE; HYDROGEN CONCENTRATION; NEEDLE SHAPED GRAIN; REACTIVE RADIO FREQUENCY MAGNETRON SPUTTERING; TEXTURE MORPHOLOGY;

THIN FILMS;

EID: 0029544831     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)06901-1     Document Type: Article

References (12)

1. Stress dependence of reactively sputtered aluminum nitride thin films on sputtering parameters
2. Effect of Hydrogen Gas onc-Axis Oriented AlN Films Prepared by Reactive Magnetron Sputtering
3. High-Energy Particles in AlN Film Preparation by Reactive Sputtering Technique