Fabrication and characterization of a silicon capacitive structure for simultaneous detection of acceleration and angular rate

International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings

Volumn 2, Issue , 1995, Pages 679-682

  Mizuno, Jun ^a   Nottmeyer, Kay ^a   Cabuz, Cleopatra ^a   Kobayashi, Takashi ^a   Esashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ELECTRODES; ETCHING; LITHOGRAPHY; MICROMACHINING; OPTICAL SENSORS; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

ANISOTROPIC ETCHING; ANODIC BONDING; CAPACITIVE DETECTION; CORIOLIS FORCE; SILICON CAPACITIVE STRUCTURE; SILICON MICROMACHINED STRUCTURE; TORSION BARS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029543070     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)