In situ phosphorus-doped polysilicon for integrated mems

International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings

Volumn 1, Issue , 1995, Pages 198-201

  Biebl, M ^a   Mulhern, G T ^a   Howe, R T ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; FABRICATION; MICROELECTROMECHANICAL DEVICES; PHOSPHORUS; PHOSPHORUS COMPOUNDS; POLYCRYSTALLINE MATERIALS; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILANES;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE FABRICATION; PHOSPHINE; POLYSILICON;

SEMICONDUCTING SILICON;

EID: 0029543023     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)