Dielectric breakdown in high-ε films for ulsi drams: III. leakage current precursors and electrodes

Integrated Ferroelectrics

Volumn 9, Issue 1-3, 1995, Pages 1-12

  Scott, J F ^a  

^a RMIT UNIVERSITY   (Australia)

Author keywords

Breakdown; BST; leakage current; PZT

Indexed keywords

DIELECTRIC BREAKDOWN; FERROELECTRIC THIN FILMS; FOWLER-NORDHEIM TUNNELING; OPTICAL EXCITATION; PHOTOEXCITATION; POOLE-FRENKEL TUNNELING; SCHOTTKY EMISSION; SPACE CHARGE LIMITED CURRENTS;

BARIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC SPACE CHARGE; ELECTRODES; INTERFACES (MATERIALS); LEAD COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MODELS; ULSI CIRCUITS;

PEROVSKITE;

EID: 0029541055     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584589508012900     Document Type: Article

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