Bandgap engineering technology for suppressing the substrate-floating-effect in 0.15 μm SOI-MOSFETS

IEEE International SOI Conference

Volumn , Issue , 1995, Pages 80-81

  Yoshimi, M ^a   Nishiyama, A ^a   Terauchi, M ^a   Arisumi, O ^a   Murakoshi, A ^a   Ushiku, Y ^a   Takeno, S ^a   Suzuki, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; HETEROJUNCTIONS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

BANDGAP ENGINEERING TECHNOLOGY; DIFFUSION CONSTANTS; SUBSTRATE FLOATING EFFECT;

MOSFET DEVICES;

EID: 0029536550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)