Novel dual string NOR (DuSNOR) memory cell technology scalable to the 256 Mbit and 1 Gbit flash memories

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 263-266

  Kim, K S ^a   Kim, J Y ^a   Yoo, J W ^a   Choi, Y B ^a   Kim, M K ^a   Nam, B Y ^a   Park, K T ^a   Ahn, S T ^a   Kwon, O H ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC LOSSES; ELECTRON TUNNELING; FABRICATION; NAND CIRCUITS; TECHNOLOGY; TRANSISTORS;

CELL ARRAYS; CELL STRINGS; CELL TRANSISTORS; FLASH MEMORY TECHNOLOGY; FOWLER-NORDHEIM TUNNELING; MEMORY CELL; OVERPROGRAM;

RANDOM ACCESS STORAGE;

EID: 0029535945     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)