Lattice sites of Li and Si and Ge

Materials Science Forum

Volumn 196-201, Issue pt 1, 1995, Pages 115-120

  Wahl, U ^a   Jahn, S G ^a   Restle, M ^a   Quintel, H ^a   Hofsass, H ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON EMISSION; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ALPHA EMISSION CHANNELING; BOND CENTER SITES; LATTICE LOCATION; ROOM TEMPERATURE; TETRAHEDRAL INTERSTITIAL SITES; TRAPPING;

LITHIUM;

EID: 0029534179     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (16)