0.54μm2 self-aligned, HSG floating gate cell (SAHF cell) for 256Mbit flash memories

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 653-656

  Shirai, H ^a   Kubota, T ^a   Honma, I ^a   Watanabe, H ^a   Ono, H ^a   Okazawa, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; FABRICATION; ION IMPLANTATION; NONVOLATILE STORAGE; OXIDES; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON;

FLASH MEMORIES; SELF ALIGNED HEMISPHERICAL GRAINED FLOATING GATE CELL; TUNNEL OXIDE GROWTH;

DATA STORAGE EQUIPMENT;

EID: 0029533430     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)