Self-aligned SiGe base bipolar technology using cold wall UHV/CVD and its application to optical communication IC's

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1995, Pages 82-88

  Sato, Fumihiko ^a   Hashimoto, Takasuke ^a   Tatsumi, Toru ^a   Soda, Masaaki ^a   Tezuka, Hiroshi ^a   Suzaki, Tetsuyuki ^a   Tashiro, Tsutomu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; INTEGRATED CIRCUIT MANUFACTURE; OPTICAL COMMUNICATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; VACUUM DEPOSITED COATINGS;

BASE ELECTRODE POLYSILICON; SELECTIVE EPITAXIAL GROWTH; SELF ALIGNED BIPOLAR TECHNOLOGY;

BIPOLAR TRANSISTORS;

EID: 0029532542     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (45)