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Volumn , Issue , 1995, Pages 64-68
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Electrical properties of vacuum deposited M/R2O3/M thin film structures (R = Dy, Ho and Yb)
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Author keywords
[No Author keywords available]
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Indexed keywords
DEPOSITION;
DIELECTRIC PROPERTIES;
DYSPROSIUM;
ELECTRIC BREAKDOWN OF SOLIDS;
ELECTRIC CONDUCTIVITY;
ELECTRIC INSULATORS;
HOLMIUM;
MICROELECTRONICS;
OPTICAL FILMS;
OXIDES;
VACUUM APPLICATIONS;
YTTERBIUM;
ELECTRON POLARISATION;
HOPPING MECHANISM;
INTERFACE POLARISATION;
IONIC POLARISATION;
METALLIC ELECTRODES;
SESQUIOXIDES;
THIN FILMS;
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EID: 0029532377
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (6)
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