Structure of temperature and velocity fields in the Si melt of a Czochralksi crystal growth system

Journal of Crystal Growth

Volumn 156, Issue 4, 1995, Pages 383-392

  Yi, Kyung Woo ^a   Booker, Vicki B ^b   Eguchi, Minoru ^a   Shyo, Toshiyuki ^a   Kakimoto, Koichi ^a  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL FLOW; COMPUTER SIMULATION; ROTATION; SILICON; STABILITY; STRUCTURE (COMPOSITION); TEMPERATURE MEASUREMENT; THREE DIMENSIONAL; VELOCITY MEASUREMENT;

BAROCLINIC INSTABILITY; RAYLEIGH-BENARD INSTABILITY; SILICON MELT; TEMPERATURE FIELD STRUCTURE; THREE-DIMENSIONAL NUMERICAL SIMULATION; VELOCITY FIELD;

CRYSTAL GROWTH FROM MELT;

EID: 0029528745     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00277-4     Document Type: Article

References (21)

1. The Czochralski growth of Bi12SiO20 crystals
2. Fluid flow patterns in a simulated garnet melt
3. Appearance of a baroclinic wave in Czochralski silicon melt
4. Double-beam x-ray radiography system for three-dimensional flow visualization of molten silicon convection
5. A study of Bénard convection with and without rotation
6. Baroclinic Waves in a Rotating Fluid Subject to Internal Heating
7. Time-Dependent Modes of Behavior of Thermally Driven Rotating Fluids
8. Long Waves and Cyclone Waves