Electrical performance of top-gate amorphous silicon thin-film transistors

Proceedings of the International Workshop on Active Matrix Liquid Crystal Displays, AMLCDs

Volumn , Issue , 1995, Pages 33-36

  Chiang, Chun sung ^a   Kanicki, Jerzy ^a   Libsch, Frank R ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LIQUID CRYSTAL DISPLAYS; PERFORMANCE; THERMAL STRESS;

CHANNEL CONDUCTION ACTIVATION ENERGY; DRAIN SOURCE VOLTAGE; FIELD EFFECT METHOD; INTERFACE STATE DENSITY; STRETCHED EXPONENTIAL EXPONENT; THRESHOLD VOLTAGE; TOP GATE AMORPHOUS SILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0029525388     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)