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Modeling the Heavy Ion Upset Cross Section
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Connell, L.W.1
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Cosmic Ray Induced Errors in MOS Memory Cells
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Rate Predictions for Single Event Effects–A Critique
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Dec.
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E. L. Petersen, J. C. Pickel, J. H. Adams, Jr., and E. C. Smith, “Rate Predictions for Single Event Effects–A Critique,” IEEE Trans. Nuc. Sci., vol. NS-39, no. 6, pp. 1577–1599, Dec. 1992.
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Effects of Process Parameter Distributions and Ion Strike Locations on SEU Cross-Section Data
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Dec.
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6
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Heavy Ion and Proton Analysis of a GaAs C-HIGFET SRAM
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Dec.
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J. H. Cutchin, P. W. Marshall, T. R. Weatherford, S. Hanks, J. Langworthy, E. L. Petersen, A. B. Campbell, A. Peczalski, “Heavy Ion and Proton Analysis of a GaAs C-HIGFET SRAM,” IEEE Trans. Nuc. Sci., vol. NS-40, no. 6, pp. 1660–1665, Dec. 1993.
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The Shape of Heavy Ion Upset Cross Section Curves
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Determination of SEU Parameters of NMOS and CMOS SRAMs
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Dec.
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SEU Characterization of a Hardened CMOS 64K and 256K SRAM
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private communication
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F. W. Sexton, private communication.
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Sexton, F.W.1
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Determination of Funnel Length from Heavy Ion Cross Section versus LET Measurements
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Variations in SEU Sensitivity of Dose-Imprinted CMOS SRAMs
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Dec.
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E.G. Stassinopoulos, G.J. Brucker, O. Van Gunten, and H.S. Kim, “Variations in SEU Sensitivity of Dose-Imprinted CMOS SRAMs,” IEEE Trans. Nucl. Sci., vol. 36, no. 6 pp. 2330–2338 Dec. 1989.
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