Cryogenic high frequency operation of tunneling hot-electron transfer amplifiers

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1995, Pages 234-242

  Murti, M R ^a   Laskar, J ^a   Hamai, M ^a   Nishimoto, M ^a   Moise, T S ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTRON TUNNELING; ENERGY GAP; HOT CARRIERS; LOW TEMPERATURE EFFECTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

BANDGAP COLLECTOR; CRYOGENIC HIGH FREQUENCY OPERATION; TUNNELING HOT ELECTRON TRANSISTOR AMPLIFIER (THETA);

AMPLIFIERS (ELECTRONIC);

EID: 0029521775     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)