New cobalt salicide technology for 0.15μm CMOS using high-temperature sputtering and in-situ vacuum annealing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 445-448

  Inoue, Ken ^a   Mikagi, Kaoru ^a   Abiko, Hitoshi ^a   Kikkawa, Takamaro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; ELECTRIC RESISTANCE; HIGH TEMPERATURE OPERATIONS; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTERING; THICK FILMS; VACUUM TECHNOLOGY;

COBALT SALICIDE TECHNOLOGY; HIGH TEMPERATURE SPUTTERING; SILICIDATION; VACUUM ANNEALING;

MOS DEVICES;

EID: 0029520356     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)