An Analog Random Access Memory in the AVLSI-RA Process for an Interpolating Pad Chamber

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 2255-2259

  Britton, C L ^a   Wintenberg, A L ^a   Read, K F ^a   Clonts, L G ^b   Kennedy, E J ^b   Smith, R S ^b   Swann, B K ^b   Musser, J A ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c INDIANA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK TOPOLOGY; ELECTROMAGNETIC FIELD MEASUREMENT; ENERGY DISSIPATION; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; RADIATION EFFECTS; TESTING;

CHARGE SENSITIVE PREAMPLIFIER; INTERPOLATING PAD CHAMBER; RAD HARD ANALOG PIPELINE; TEST PATTERN GENERATOR FREQUENCY LIMITATIONS;

ANALOG STORAGE;

EID: 0029520081     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489423     Document Type: Article

References (9)

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