Emission characteristics of ion-implanted silicon emitter tips

Japanese Journal of Applied Physics

Volumn 34, Issue 12, 1995, Pages 6907-6911

  Hirano, Takayuki ^a,b   Kanemaru, Seigo ^a   Tanoue, Hisao ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

Cathode; Cone; Electron emission; Field emitter; Ion implantation; Silicon emitter; Vacuum microelectronics

Indexed keywords

ANNEALING; BAND STRUCTURE; CATHODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON EMISSION; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; IONS; MICROELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

ENERGY BAND STRUCTURE; FOWLER-NORDHEIM THEORY; GATED EMITTER STRUCTURE FABRICATION; ION IMPLANTED SILICON FIELD EMITTER TIPS; VACUUM MICROELECTRONICS;

ION BEAM LITHOGRAPHY;

EID: 0029519908     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.6907     Document Type: Article

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