Threshold voltage adjustment in SOI MOSFET's by employing tantalum for gate material

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 881-884

  Shimada, Hisayuki ^a   Hirano, Yuichi ^a   Ushiki, Takeo ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRODES; IMPURITIES; LOW TEMPERATURE PROPERTIES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TANTALUM; THERMODYNAMIC STABILITY; THIN FILM DEVICES; VOLTAGE CONTROL;

GATE ELECTRODE; GATE MATERIAL; GATE OXIDE THICKNESS; IMPURITY CONCENTRATION; LOW TEMPERATURE PROCESSING; THRESHOLD VOLTAGE CONTROL;

MOSFET DEVICES;

EID: 0029519246     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)