Excellent electro/stress-migration-resistance surface-silicide passivated giant-grain Cu-Mg alloy interconnect technology for giga scale integration ( GSI)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 253-256

  Takewaki, T ^a   Kaihara, R ^a   Ohmi, T ^a   Nitta, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER ALLOYS; ELECTRIC RESISTANCE; ELECTROMIGRATION; GRAIN SIZE AND SHAPE; PASSIVATION; SEMICONDUCTING FILMS; SILICA; STRESSES; THERMAL CONDUCTIVITY;

GIGA SCALE INTEGRATION; SILICIDE;

INTEGRATED CIRCUITS;

EID: 0029519226     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)