Ion implantation and transient enhanced diffusion

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 77-80

  Poate, J M ^a   Eaglesham, D J ^a   Gilmer, G H ^a   Gossmann, H J ^a   Jaraiz, M ^a   Rafferty, C S ^a   Stolk, P A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPOSITION; COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL DEFECTS; ION IMPLANTATION; MEASUREMENTS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; THERMAL EFFECTS;

BINARY COLLISION PROGRAM; CLUSTERING; CONCENTRATION GRADIENT; DEFECT COUNTING MEASUREMENTS; DIFFUSION FLUX; SILICON SELF INTERSTITIALS; TRANSIENT ENHANCED DIFFUSION;

DIFFUSION IN SOLIDS;

EID: 0029519225     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)