Formation of silicon on insulator (SOI) with separation by plasma implantation of oxygen (SPIMOX)

Materials Research Society Symposium - Proceedings

Volumn 354, Issue , 1995, Pages 117-122

  Liu, J B ^a   Iyer, S S K ^a   Min, J ^a   Chu, P ^a   Gronsky, R ^a   Hu, C ^a   Cheung, N W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; MICROSTRUCTURE; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEPARATION; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

OXIDE LAYERS; PLASMA IMMERSION ION IMPLANTATION; SEPARATION BY PLASMA IMPLANTATION OF OXYGEN; SILICON DIOXIDE PRECIPITATES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0029518568     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)