Tantalum-gate SOI MOSFET's featuring excellent threshold voltage control in low-power applications

IEEE International SOI Conference

Volumn , Issue , 1995, Pages 96-97

  Shimada, H ^a   Ushiki, T ^a   Hirano, Y ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ETCHING; GATES (TRANSISTOR); OXIDATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TANTALUM; VOLTAGE CONTROL;

CHEMICAL RESISTIVITY; SCHOTTKY BARRIER MEASUREMENT; THERMAL OXIDATION; THRESHOLD VOLTAGE CONTROL;

MOSFET DEVICES;

EID: 0029518505     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)