Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1674-1680

  Shaw, D C ^a   Swift, G M ^b   Johnston, A H ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; RADIATION EFFECTS; RADIATION HARDENING; VOLTAGE MEASUREMENT;

DYNAMIC RANDOM ACCESS MEMORY; IONIZING DOSE RADIATION; RETENTION TIME MEASUREMENTS; THRESHOLD VOLTAGE;

RANDOM ACCESS STORAGE;

EID: 0029517919     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488765     Document Type: Article

References (14)

1. M. Horiguchi, et. al, “An Experimental 220MHz 1Gb DRAM,” Digest of Technical Papers from the 1995 IEEE International Solid-State Circuits Conference, vol. 38, p. 252, February 17, 1995.
2. T. Sugibayashi, et. al, “A 1Gb DRAM for File Applications,” Digest of Technical Papers from the 1995 IEEE International Solid-State Circuits Conference, vol. 38, p. 254, February 17, 1995.
3. D.C. Shaw, G. M. Swift, D. J. Padgett, and A.H. Johnston, “Radiation Effects in Five Volt and Advanced Lower Voltage DRAMs,” IEEE Trans. Nucl. Sci., NS-41, 2452 (1994).
4. T.R Oldham, K. W. Bennett, J. Beaucour, T. Carriere, C. Polvey, and P. Garnier, “Total Dose Failures in Advanced Electronics from Single Ions,” IEEE Trans. Nucl. Sci., NS-40, 1236 (1993).
5. C. Dufour, P. Garnier, T. Carriere, and J. Beaucour, “Heavy Ion Induced Single Hard Errors on Submicronic Memories,” IEEE Trans. Nucl. Sci., NS-38, 1693 (1992).
6. G. M. Swift, D. J. Padgett, and A.H. Johnston, “A New Class of Single Event Hard Errors,” IEEE Trans. Nucl. Sci., NS-41, 2043 (1994).
7. K. Nishinohara, N. Shigyo and T. Wada, “Effects of Microscopic Fluctuations in Dopant Distributions on Threshold Voltage,” IEEE Trans. Elect. Dev., ED-39, 634 (1992).
8. Hon-Sum Wong and Yuan Taur, “Three-Dimensional ‘Atomistic’ Simulation of Discrete Random Dopant Distribution Effects in Sub-0.1 μm MOSFETs,” 1993 International Electron Devices Meeting, 705 (1993).
9. P. S. WinoKur, F. W. Sexton, G. L. Hash, and D. C. Turpin, “Total Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments,” IEEE Trans. Nucl. Sci., NS-34, 1448 (1987).
10. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, John Wiley, NY, 1989.
11. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nucl. Sci., NS-31, 1453 (1984).
12. F. W. Sexton and J. R. Schwank, “Correlation of Radiation Effects in Transistors and Integrated Circuits,” IEEE Trans. Nucl. Sci., NS-32, 3975 (1985).
13. D. M. Fleetwood, P. S. Winolur, and L. C. Riewe, “An Improved Standard Total Dose Test for CMOS Space Electronics,” IEEE Trans. Nucl. Sci., NS-36, 1963 (1989).
14. C. M. Dozier, D. B. Brown, R. K. Freitag, and J. L. Throckmorton, “Use of the Subthreshold Behavior to Compare X-Ray and Co-60 Radiation-Induced Defects in MOS Transistors,” IEEE Trans. Nucl. Sci., NS-33, 1324 (1986).