LPCVD silicon oxynitride from dichlorosilane, nitrous oxide and ammonia

Proceedings of the International Semiconductor Conference, CAS

Volumn , Issue , 1995, Pages 323-326

  Modreanu, M ^a   Cosmin, P ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; NITROGEN OXIDES; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILANES; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

DICHLOROSILANE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; RELATIVE GAS FLOW RATE RATIO; SILICON OXYNITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029517852     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)