Leakage mechanism and optimized conditions of Co salicide process for deep-submicron CMOS devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 449-452

  Goto, K ^a   Fushida, A ^a   Watanabe, J ^a   Sukegawa, T ^a   Kawamura, K ^a   Yamazaki, T ^a   Sugii, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; COMPUTER SIMULATION; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; OPTIMIZATION; PERFORMANCE; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SALICIDE PROCESS; DEEP SUBMICRON CMOS DEVICES; SILICIDE FILMS;

MOS DEVICES;

EID: 0029516375     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)