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Volumn 43, Issue 12, 1995, Pages 2863-2867

Novel Single Device Balanced Resistive HEMT Mixers

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; OSCILLATORS (ELECTRONIC); SCHEMATIC DIAGRAMS; TRANSMISSION LINE THEORY;

EID: 0029515720     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.475647     Document Type: Article
Times cited : (21)

References (10)
  • 1
    • 0023329784 scopus 로고
    • A GaAs MESFET mixer with very low intermodulation
    • S. A. Maas, “A GaAs MESFET mixer with very low intermodulation,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 425–429, 1987.
    • (1987) IEEE Trans. Microwave Theory Tech. , vol.MTT-35 , pp. 425-429
    • Maas, S.A.1
  • 2
    • 0023172940 scopus 로고
    • A GaAs MESFET Balanced mixer with very low intermodulation
    • Las Vegas
    • S. A. Maas, “A GaAs MESFET Balanced mixer with very low intermodulation,” inIEEE-MTT Int. Microwave Symp. Dig., Las Vegas, 1987, pp. 895–898.
    • (1987) IEEE-MTT Int. Microwave Symp. Dig. , pp. 895-898
    • Maas, S.A.1
  • 3
    • 0024945594 scopus 로고
    • Zero bias GaInAs MISFET mixers
    • Long Beach
    • K. W. Chang et al., “Zero bias GaInAs MISFET mixers,” in IEEE-MTT Int. Microwave Symp. Dig., Long Beach, 1989, pp. 1027–1030.
    • (1989) IEEE-MTT Int. Microwave Symp. Dig. , pp. 1027-1030
    • Chang, K.W.1
  • 4
    • 0026383095 scopus 로고
    • A millimeter wave passive FET mixer with low 1/f noise
    • Boston
    • J. Geddes, P. Bauhahn, and S. Swirhun, “A millimeter wave passive FET mixer with low 1/f noise,” in IEEE-MTT Int. Microwave Symp. Dig., Boston, 1991, pp. 1045–1047.
    • (1991) IEEE-MTT Int. Microwave Symp. Dig. , pp. 1045-1047
    • Geddes, J.1    Bauhahn, P.2    Swirhun, S.3
  • 5
    • 0027086564 scopus 로고
    • High performance resistive EHF mixer using InGaAs HEMT's
    • Albuquerque
    • K. W. Chang et al., “High performance resistive EHF mixer using InGaAs HEMT's,” in IEEE-MTT Int. Microwave Symp. Dig., Albuquerque, 1992, pp. 1409–1413.
    • (1992) IEEE-MTT Int. Microwave Symp. Dig. , pp. 1409-1413
    • Chang, K.W.1
  • 7
    • 0027148367 scopus 로고
    • An F-band resistive mixer based on heterostructure field effect transistor technology
    • Atlanta
    • I. Angelov, H. Zirath, N. Rorsman, C. Karlsson, and R. Weikle, “An F-band resistive mixer based on heterostructure field effect transistor technology,” in IEEE-MTT Int. Microwave Symp., Atlanta, 1993, pp. 787–790.
    • (1993) IEEE-MTT Int. Microwave Symp. , pp. 787-790
    • Angelov, I.1    Zirath, H.2    Rorsman, N.3    Karlsson, C.4    Weikle, R.5
  • 10
    • 0029210288 scopus 로고
    • A novel single device balanced resistive HEMT mixer
    • Orlando
    • K. Yhland, N. Rorsman, and H. Zirath, “A novel single device balanced resistive HEMT mixer,” in IEEE-MTT Int. Microwave Symp. Dig., Orlando, 1995, pp. 1411–1414.
    • (1995) IEEE-MTT Int. Microwave Symp. Dig. , pp. 1411-1414
    • Yhland, K.1    Rorsman, N.2    Zirath, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.