Characteristics of CMOSFETs with sputter-deposited W/TiN stack gate

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 119-120

  Lee, D H ^a   Joo, S H ^a   Lee, G H ^a   Moon, J ^a   Shim, T E ^a   Lee, J G ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; GATES (TRANSISTOR); OXIDES; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; TITANIUM NITRIDE; TUNGSTEN; ULSI CIRCUITS;

BREAKDOWN CHARACTERISTICS; GATE OXIDE; HIGH SUBSTRATE TEMPERATURE; LOW SHEET RESISTANCE; SILICON-MIDGAP WORKFUNCTION; STOICHIOMETRIC FILM; TUNGSTEN/TITANIUM NITRIDE STACK GATE;

MOSFET DEVICES;

EID: 0029515652     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)