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Japanese Journal of Applied Physics

Volumn 34, Issue 12, 1995, Pages 6734-6737

X-ray lithography with a wet-silylated and dry-developed resist

(5) Oizumi, Hiroaki a Yamashita, Yoshio a Ogawa, Taro b Soga, Takashi b Yamanaka, Ryoko b

a SORTEC Corporation (Japan)

b HITACHI LTD (Japan)

Author keywords

B DMA DS; Dry development; Silylation; Wet silylation; X ray lithography; XRL

Indexed keywords

AGENTS; ASPECT RATIO; CHARACTERIZATION; COMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MASKS; PHOTORESISTS; SILANES; SILICON; SUBSTRATES; SYNCHROTRON RADIATION; XYLENE;

BISDIMETHYLAMINO DIMETHYLSILANE; DIFFUSION PROMOTER; DRY DEVELOPED RESIST; DRY DEVELOPMENT; HEXAMETHYLCYCLOTRISILAZANE; METHYL CELLOSOLVE ACETATE; SILYLATING AGENT; WET SILYLATED RESIST; WET SILYLATION; X RAY MASKS;

X RAY LITHOGRAPHY;

EID: 0029514483 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.34.6734 Document Type: Article

Times cited : (5)

References (12)

1
- 0027857033
- T. Tanaka, M. Morigami and N. Atoda: Jpn. J. Appi. Phys. 32(1993) 6059.
- (1993) Jpn. J. Appi. Phys. 32 , pp. 6059
- Tanaka, T.¹ Morigami, M.² Atoda, N.³

2
- 0000266846
- T. Tanaka, M. Morigami, H. Oizumi, T. Ogawaand S. Uchino:Jpn. J. Appi. Phys. 33 (1994) L1803.
- (1994) Jpn. J. Appi. Phys , vol.33 , pp. L1803
- Tanaka, T.¹ Morigami, M.² Oizumi, H.³ Ogawaand, T.⁴ Uchino, S.⁵

3
- 0026981751
- T. Ogawa, S. Murayama, K. Mochiji and E. Takeda: Jpn. J.Appi. Phys. 31 (1992) 4228.
- (1992) Jpn. J.Appi. Phys , vol.31 , pp. 4228
- Ogawa, T.¹ Murayama, S.² Mochiji, K.³ Takeda, E.⁴

4
- 0000771906
- K. Baik, L. Van den hove and B. Roland: J. Vae. Sei. & Teeh-nol. B 9 (1991) 3399.
- (1991) J. Vae. Sei. & Teeh-Nol. B , vol.9 , pp. 3399
- Baik, K.¹ Van Den Hove, L.² Roland, B.³

5
- 0002424334
- M. Böttcher, L. Bauch and I. Stolberg: J. Vae. Sei. & Technol.B 12 (1994) 3473.
- (1994) J. Vae. Sei. & Technol.B , vol.12 , pp. 3473
- Böttcher, M.¹ Bauch, L.² Stolberg, I.³

6
- 0028201243
- G. N. Taylor, R. S. Hutton, S. M. Stein, C. H. Boyce, B. LaFontaine, A. A. MacDowell, O. R. Wood II, D. R. Wheeler andG. D. Kubiak: Microelectron. Eng. 23 (1994) 279.
- (1994) Microelectron. Eng. , vol.23 , pp. 279
- Taylor, G.N.¹ Hutton, R.S.² Stein, S.M.³ Boyce, C.H.⁴ La Fontaine, B.⁵ Macdowell, A.A.⁶ Wood, O.R.⁷ Wheeler, D.R.⁸ Kubiak, G.D.⁹

7
- 3643129428
- J. Nishino, M. Kawakami, T. Yanagisawa and K. Okada: J.Vae. Sei. & Technol. B 8 (1990) 1514.
- (1990) J.Vae. Sei. & Technol. B , vol.8 , pp. 1514
- Nishino, J.¹ Kawakami, M.² Yanagisawa, T.³ Okada, K.⁴

8
- 84956265603
- inJapanese
- T. Soga, T. Ogawa, H. Oizumi, T. Kure and E. Takeda: Inst.Electron., Inf. & Commun. Eng., Tech. Rep. 92 (1992) 25 [inJapanese].
- (1992) Inst.Electron., Inf. & Commun. Eng., Tech. Rep. , vol.92 , pp. 25
- Soga, T.¹ Ogawa, T.² Oizumi, H.³ Kure, T.⁴ Takeda, E.⁵

9
- 0024752413
- T. Ogawa, K. Mochiji, Y. Soda and T. Kimura: Jpn. J. Appl.Phys. 28 (1989) 2070.
- (1989) Jpn. J. Appl.Phys , vol.28 , pp. 2070
- Ogawa, T.¹ Mochiji, K.² Soda, Y.³ Kimura, T.⁴

10
- 0039450646
- R. A. Häring and K. Stewart: J. Vac. Sei. & Technol. B9(1991) 3406.
- (1991) J. Vac. Sei. & Technol , vol.B9 , pp. 3406
- Häring, R.A.¹ Stewart, K.²

11
- 0029214360
- K. Maeda, T. Ohfuji, N. Aizaki and E. Hasegawa: Proc. SPIE2438 (1995) 465.
- (1995) Proc. SPIE , vol.2438 , pp. 465
- Maeda, K.¹ Ohfuji, T.² Aizaki, N.³ Hasegawa, E.⁴

12
- 85075973793
- M. A. Hartney, R. R. Kunz, L. M. Eriksen and D. C. LaTulipe:Proc. SPIE 1925 (1993) 270.
- (1993) Proc. SPIE , vol.1925 , pp. 270
- Hartney, M.A.¹ Kunz, R.R.² Eriksen, L.M.³ Latulipe, D.C.⁴

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