A Comprehensive Study of Suppression of Boron Penetration by Amorphous-Si Gate in p+ -Gate PMOS Devices.

IEEE Transactions on Electron Devices

Volumn 42, Issue 12, 1995, Pages 2080-2088

  Chih YungLin, C Y ^a   Juan, Kuei Chi ^a   Chang, Chun Yen ^a   Pan, F M ^b   Chou, P F ^b   Hung, S F ^c   Chen, L J ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); ION IMPLANTATION; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES;

BORON PENETRATION; GATE OXIDE RELIABILITY; NITRIDED GATE OXIDE; POLYGATE RESISTANCE; SILICON GATE STRUCTURE;

MOS DEVICES;

EID: 0029514423     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.477764     Document Type: Article

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