0.25 μm CMOS technology with 45 angstrom NO-nitrided oxide

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 691-694

  Luo, Marie S C ^a   Tsui, Paul V G ^a   Chen, Wei Ming ^a   Gilbert, Percy V ^a   Maiti, Bikas ^a   Sitaram, A R ^a   Sun, Shih Wei ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; NITRIDING; NITROGEN OXIDES; OXIDES; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; VOLTAGE MEASUREMENT;

NITROGEN OXIDE NITRIDED OXIDE; OXYNITRIDE GATE DIELECTRIC; RING OSCILLATOR GATE DELAY; SHORT CHANNEL EFFECTS; TITANIUM NITRIDE CAPPED COBALT SALICIDE;

MOS DEVICES;

EID: 0029514097     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)