Simultaneous temperature measurement of wafers in chemical mechanical polishing of silicon dioxide layer

Japanese Journal of Applied Physics

Volumn 34, Issue 12, 1995, Pages 6314-6320

  Sugimoto, Fumitoshi ^a   Arimoto, Yoshihiro ^a   Ito, Takashi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

CMP; Groove; ILD; Oxide layer; Polishing; Polyurethane; Temperature

Indexed keywords

CHEMICAL POLISHING; CHEMICAL REACTIONS; OXIDES; POLYURETHANES; REMOVAL; SILICON WAFERS; SLURRIES; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

CHEMICAL MECHANICAL POLISHING; GROOVE; HARD POLISHING PAD; OXIDE LAYER; WAFER TEMPERATURE;

SILICA;

EID: 0029513786     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.6314     Document Type: Article

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