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Applied Physics Letters

Volumn 67, Issue , 1995, Pages 3795-

1.3 μm photoluminescence from InGaAs quantum dots on GaAs

(5) Mirin, R P a Ibbetson, J P a Nishi, K a Gossard, A C a Bowers, J E a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; INTEGRATED OPTICS; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM; INDIUM GALLIUM ARSENIDE; INTEGRATED PHOTOLUMINESCENCE INTENSITY; ISLANDS;

PHOTOLUMINESCENCE;

EID: 0029509799 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.115386 Document Type: Article

Times cited : (237)

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