Influence of processing variables on the structure and properties of ZnO films

Thin Solid Films

Volumn 270, Issue 1-2, 1995, Pages 27-32

  Exarhos, Gregory J ^a   Sharma, Shiv K ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF HAWAII   (United States)

Author keywords

Deposition process; Raman scattering; Sputtering; Zinc oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; MORPHOLOGY; PHASE EQUILIBRIA; PULSED LASER APPLICATIONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICA; SILICON; SPUTTERING; SURFACES; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTALLINE PHASE; OPTICAL RESPONSE; PULSED LASER DEPOSITION; RAMAN LINE SHIFT; REACTIVE SPUTTERING; WURTZITE PHASE;

THIN FILMS;

EID: 0029508859     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)06855-4     Document Type: Article

References (21)

1. Rapid Thermal Annealing of Thin ZnO Films
2. The effect of substrate temperature and rf power on the growth rate and the orientation of ZnO thin films prepared by plasma enhanced chemical vapor deposition
3. A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film