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Volumn , Issue , 1995, Pages 311-321
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Latent gate oxide defects caused by CDM-ESD
a
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS FILMS;
CURRENT VOLTAGE CHARACTERISTICS;
DEFECTS;
DIODES;
ELECTRIC CONDUCTIVITY;
ELECTRIC DISCHARGES;
ION BEAMS;
LEAKAGE CURRENTS;
MOS DEVICES;
TRANSMISSION ELECTRON MICROSCOPY;
CHARGE DEVICE MODEL-ESD;
CRITICAL VOLTAGE;
FOCUSED ION BEAM;
LATENT BREAKDOWN;
LATENT GATE OXIDE DEFECTS;
MELT BOLT MODEL;
QUASI-STATIC VOLTAGE RAMP TEST;
REVERSE DIODES;
VOLTAGE STRESS;
INTEGRATED CIRCUITS;
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EID: 0029506120
PISSN: 07395159
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/eosesd.1995.478299 Document Type: Conference Paper |
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Times cited : (19)
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References (15)
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